✦ LIBER ✦
AlGaN/GaN Heterostructure Field-Effect Transistors on 4H-SiC Substrates with Current-Gain Cutoff Frequency of 190 GHz
✍ Scribed by Higashiwaki, Masataka; Mimura, Takashi; Matsui, Toshiaki
- Book ID
- 117998939
- Publisher
- Institute of Pure and Applied Physics
- Year
- 2008
- Tongue
- English
- Weight
- 309 KB
- Volume
- 1
- Category
- Article
- ISSN
- 1882-0778
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