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7.5 kW/mm2 current switch using AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors on SiC substrates

โœ Scribed by Simin, G.; Hu, X.; Ilinskaya, N.; Kumar, A.; Koudymov, A.; Zhang, J.; Asif Khan, M.; Gaska, R.; Shur, M.S.


Book ID
120622259
Publisher
The Institution of Electrical Engineers
Year
2000
Tongue
English
Weight
230 KB
Volume
36
Category
Article
ISSN
0013-5194

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