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AlGaN/GaN HEMTs-an overview of device operation and applications

✍ Scribed by Mishra, U.K.; Parikh, P.; Yi-Feng Wu

Book ID
118694496
Publisher
IEEE
Year
2002
Tongue
English
Weight
787 KB
Volume
90
Category
Article
ISSN
0018-9219

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Optimization of AlGaN/GaN HEMTs for high
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## Abstract In this paper, the structure and processing of AlGaN/GaN high electron mobility transistors have been optimized for maximum small signal gain at high frequencies. The effect of the gate resistance, gate‐to‐drain capacitance and output conductance on the power gain cut‐off frequency, __f

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## Abstract In the article [1] featured at Editor's Choice, the structure and processing of AlGaN/GaN high electron mobility transistors (HEMTs) have been optimized for maximum small signal gain at high frequencies. The cover picture combines the sample structure – shown schematically and in a scan