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Simulation of Semiconductor Processes and Devices 2007 || Hydrodynamic Modeling of AlGaN/GaN HEMTs

✍ Scribed by Grasser, Tibor; Selberherr, Siegfried

Book ID: 118210747
Publisher: Springer Vienna
Year: 2007
Weight: 405 KB
Category: Article
ISBN: 3211728600
DOI: 10.1007/978-3-211-72861-1_65

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## Abstract The large signal time domain simulation of the 40 GHz one‐stage amplifier with the AlGaN/GaN‐HEMT is performed by means of the coupled physical device‐circuit simulation, in which the Monte Carlo (MC) device simulator is incorporated into the embedding circuit as a realistic physics‐bas