๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Al-induced lateral crystallization of amorphous Si thin films by microwave annealing

โœ Scribed by Rao Rui; Xu Zhong-yang; Zeng Xiang-bing

Publisher
Wuhan University of Technology
Year
2002
Tongue
English
Weight
792 KB
Volume
17
Category
Article
ISSN
1000-2413

No coin nor oath required. For personal study only.

๐Ÿ“œ SIMILAR VOLUMES

Microwave-induced low-temperature crysta
Microwave-induced low-temperature crystallization of amorphous Si thin films
โœ Jin Hyung Ahn; Jeong No Lee; Yoon Chang Kim; Byung Tae Ahn ๐Ÿ“‚ Article ๐Ÿ“… 2002 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 158 KB

Microwave heating was utilized for low-temperature crystallization of amorphous Si (a-Si) films. Microwave heating lowered the annealing temperature and reduced the annealing time. By microwave heating the hydrogen in the amorphous films was diffused out long before the nucleation of polycrystalline

Nanovoid formation by change in amorphou
Nanovoid formation by change in amorphous structure through the annealing of amorphous Al2O3 thin films
โœ M. Tane; S. Nakano; R. Nakamura; H. Ogi; M. Ishimaru; H. Kimizuka; H. Nakajima ๐Ÿ“‚ Article ๐Ÿ“… 2011 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 797 KB

The formation mechanism of a high density of nanovoids by annealing amorphous Al 2 O 3 thin films prepared by an electron beam deposition method was investigated. Transmission electron microscopy observations revealed that nanovoids $1-2 nm in size were formed by annealing amorphous Al 2 O 3 thin fi