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ChemInform Abstract: Metal-Induced Crystallization of a-Si Thin Films by Nonvacuum Treatments.

✍ Scribed by A. K. KALKAN; S. J. FONASH

Publisher
John Wiley and Sons
Year
2010
Weight
30 KB
Volume
29
Category
Article
ISSN
0931-7597

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## Abstract A modified crystallization process using current‐induced joule heating under vacuum is presented. A thin layer of high temperature resistant tungsten was sputtered on the amorphous silicon as the conducting and annealing medium. The thin film thickness was measured by α‐stepper. The hig