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Thermal modeling of laser-annealing-induced crystallization of amorphous NiTi thin films

✍ Scribed by Xi Wang; Yves Bellouard; Zhenyu Xue; Joost J. Vlassak

Publisher: Springer
Year: 2007
Tongue: English
Weight: 351 KB
Volume: 90
Category: Article
ISSN: 1432-0630
DOI: 10.1007/s00339-007-4331-z

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## Abstract We study the influence of high‐temperature annealing (1100–1200 °C) on the crystallization of nitrogen‐doped silicon films deposited by LPCVD (low‐pressure chemical vapor deposition) at low temperature (465 °C) from disilane Si~2~H~6~ and ammonia NH~3~. Scanning electron microscopy (SEM