Advanced planarized passivation for sub-micron technology

✍ Scribed by Choon Kun Ryu; Judy Huang

• Publisher: Elsevier Science
• Year: 1999
• Tongue: English
• Weight: 350 KB
• Volume: 45
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/s0167-9317(98)00284-6

✦ Synopsis

An advanced passivation gap-fill process was developed for sub-micron technology. Excellent gap-fill was achieved using the stack of triethoxyfluorosilane (TEFS) doped fluoro-silicate (FSG) and silicon nitride films. This TEFS-based gap-fill process provides both high throughput and cost-effective planarized passivation. The TEFS-FSG film can completely fill 0.45 mm width 3 0.9 mm height gap. No forbidden void or cavity was observed in larger gaps wider than 1 mm after the deposition of a silicon nitride cap-layer. Various reliability tests such as pressure cooker test, corrosion test, and seven-alloy anneal test were carried out. Corrosion test result showed that there was no peeling or corrosion mark on TEFS-FSG film deposited on TiN / Ti /Al metal wafers. FTIR data indicated there was no water absorption in TEFS-FSG film after pressure cooker and corrosion tests.