An advanced passivation gap-fill process was developed for sub-micron technology. Excellent gap-fill was achieved using the stack of triethoxyfluorosilane (TEFS) doped fluoro-silicate (FSG) and silicon nitride films. This TEFS-based gap-fill process provides both high throughput and cost-effective p
A sub-micron BiCMOS technology for telecommunications
โ Scribed by R. Hadaway; P. Kempf; P. Schvan; M. Rowlandson; V. Ho; J. Kolk; B. Tait; D. Sutherland; G. Jolly; I. Emesh
- Publisher
- Elsevier Science
- Year
- 1991
- Tongue
- English
- Weight
- 216 KB
- Volume
- 15
- Category
- Article
- ISSN
- 0167-9317
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