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Accurate RBS Measurements of the Indium Content of InGaAs Thin Films

✍ Scribed by Jeynes, C.; Jafri, Z. H.; Webb, R. P.; Kimber, A. C.; Ashwin, M. J.

Publisher
John Wiley and Sons
Year
1997
Tongue
English
Weight
275 KB
Volume
25
Category
Article
ISSN
0142-2421

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✦ Synopsis

Rutherford backscattering is used to obtain absolute compositional data from InGaAs thin Ðlms without any reference standards. Carbon-doped thin Ðlms with compositions varying between 0.02 AE x AE 0.4 have In x

Ga 1~x As been analysed and values of x obtained with an estimated accuracy of ¿1% in most cases. The observed variation in two measurements of a set of nine samples with a range of values of x has a mean of 1.000 and a standard deviation of 2.2% . This observed error is not inconsistent (at the 5% signiÐcance level) with the estimated error. The analytical method described is valid for many compound thin Ðlms.

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