Accurate measurement of deposition rates for growth of Bi-based oxide thin films

✍ Scribed by Bingsen Zhang; Yang Qi

• Publisher: John Wiley and Sons
• Year: 2011
• Tongue: English
• Weight: 206 KB
• Volume: 46
• Category: Article
• ISSN: 0232-1300
• DOI: 10.1002/crat.201100016

✦ Synopsis

Abstract

Bi‐based oxide thin films are important superconducting materials because of its wide applicability, high transition temperatures, and low toxicity. To achieve high quality Bi‐based oxide thin films by molecular beam epitaxy (MBE), the composition is a key parameter. Here, Bi, Cu, Cu/Sr and Cu/Ca thin films on glass substrates prepared by MBE have been examined by using both X‐ray reflectivity and surface profiler. The thickness and surface roughness were obtained through calculation and simulation. In comparison with the film thicknesses measured by these two methods, they are in good agreement. The lines of thickness deposition rate (R) versus source temperature (T) are according with LogR=a+b/T based on Clausius‐Clapeyron equation. Moreover, the Bi~2.1~Ca~y~Sr~1.9‐y~CuO~6+δ~ thin films with different composition and thickness were successfully prepared by MBE by applying the thickness deposition rate lines. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)