Boron and germanium 6-doped silicon samples were studied using SIMS depth profiling on a Cameca IMS-4F instrument with O,', N z + and Cs' primary beams at various energies and incidence angles. The depth resolution characteristics were compared. We show that, with experimental conditions being the s
Accuracy of calibrated depth by delta-doped reference materials in shallow depth profiling
β Scribed by M. Tomita; H. Tanaka; M. Koike; T. Kinno; Y. Hori; N. Yoshida; T. Sasaki; S. Takeno
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 430 KB
- Volume
- 255
- Category
- Article
- ISSN
- 0169-4332
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Depth profiles have been made for a new batch of the certified reference material, BCR 261, of ~30 nm and 100 nm of anodic tantalum pentoxide layers on tantalum foil. Atomic force microscopy studies show that the preparation method traditionally used provides an excellent substrate root-mean-square
## Abstract Deltaβdoped structures represent a powerful class of test structures to investigate the experimental and fundamental factors limiting the depth resolution obtainable in SIMS sputter depth profiling. In this work, theoretical studies of the effects on the broadening of an Si delta spike