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Absorption and photoluminescence under pressure in InGaAs/GaAs strained quantum wells

โœ Scribed by T.P. Sosin; P. Perlin; W. Trzeciakowski; R. Tober

Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
346 KB
Volume
56
Category
Article
ISSN
0022-3697

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๐Ÿ“œ SIMILAR VOLUMES

Photoluminescence saturation in InGaAs/G
Photoluminescence saturation in InGaAs/GaAs single quantum wells
โœ A. Anedda; F. Congiu; E. Fortin; A. Mura; A.P. Roth ๐Ÿ“‚ Article ๐Ÿ“… 1993 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 198 KB

Saturation of the photoluminescence associated with the \(11 \mathrm{H}\) transition in the InGaAs single quantum wells is observed under high intensity optical excitation. At the onset of saturation, a spillover of the photoluminescence occurs into the GaAs cladding layers as the excitation intensi