✦ LIBER ✦

HigHighly strained InGaAs/GaAs quantum wells emitting beyond 1.2 µm

✍ Scribed by T. K. Sharma; M. Zorn; U. Zeimer; H. Kissel; F. Bugge; M. Weyers

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Metalorganic vapour phase epitaxy growth

✍ A.K. Srivastava; B.M. Arora; S. Banerjee 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 560 KB

Electron-Hole Dynamics in MOCVD-Grown In

✍ De Giorgi, M. ;Lingk, C. ;von Plessen, G. ;Feldmann, J. ;De Rinaldis, S. ;De Vit 📂 Article 📅 2002 🏛 John Wiley and Sons 🌐 English ⚖ 77 KB 👁 2 views

InAs/InGaAs Quantum Dot Microcavity Diod

✍ N.A. Maleev; I.L. Krestnikov; A.R. Kovsh; A.V. Sakharov; V.M. Ustinov; S.S. Mikh 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 90 KB 👁 2 views

Strained quaternary GaInAsP quantum well

✍ C. Starck; J.-Y. Emery; R.J. Simes; M. Matabon; L. Goldstein; J. Barrau 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 267 KB

Gas source molecular beam epitaxy growth

✍ M. Usami; Y. Matsushima; Y. Takahashi 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 487 KB

Gas source molecular beam epitaxy of alt

✍ J.-Y. Emery; C. Starck; L. Goldstein; A. Ponchet; A. Rocher 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 414 KB