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Gas source molecular beam epitaxy growth of GaAs/InGaP superlattice as optical confinement layers in 0.98 μm InGaAs/InGaP strained quantum well lasers

✍ Scribed by M. Usami; Y. Matsushima; Y. Takahashi


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
487 KB
Volume
150
Category
Article
ISSN
0022-0248

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