Diffusion of a Si adatom over the reconstructed Si 100 surface with a single-height step on it is studied using the pseudopotential total energy method. The S rebonded step is B shown to act as a good sink for adatoms descending onto the lower ledge. This is due to the presence of deep traps on the
Ab-initio simulations on growth and interface properties of epitaxial oxides on silicon
✍ Scribed by C.J. Först; C.R. Ashman; K. Schwarz; P.E. Blöchl
- Book ID
- 108207484
- Publisher
- Elsevier Science
- Year
- 2005
- Tongue
- English
- Weight
- 449 KB
- Volume
- 80
- Category
- Article
- ISSN
- 0167-9317
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