Simulation of porous silicon formation and silicon epitaxy on its surface
β Scribed by P. L. Novikov
- Book ID
- 105603628
- Publisher
- Springer
- Year
- 1999
- Tongue
- English
- Weight
- 630 KB
- Volume
- 42
- Category
- Article
- ISSN
- 1573-9228
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π SIMILAR VOLUMES
Porous silicon (PSi) samples were prepared by electrochemical etching of silicon-on-insulator wafers, consisting of 45 m thick p-type (111) silicon epitaxial layer grown on a thin 100 nm SiO 2 layer on silicon substrates, by varying the concentration of 48% HF in ethanol solution. Within the epitaxi
The aim of this experiment is to grow a thin silicon layer (<50Β΅m) by Liquid Phase Epitaxy (LPE) onto porous silicon. This one acts as a sacrificial layer in order to transfer the 50 Β΅m epitaxial layer onto foreign substrates like ceramics. After transfer, the silicon wafer is then re-usable. In thi