Mechanism of silicon epitaxy on porous silicon layers
✍ Scribed by P. L. Novikov; L. N. Aleksandrov; A. V. Dvurechenskii; V. A. Zinov’ev
- Book ID
- 110146571
- Publisher
- SP MAIK Nauka/Interperiodica
- Year
- 1998
- Tongue
- English
- Weight
- 184 KB
- Volume
- 67
- Category
- Article
- ISSN
- 0021-3640
- DOI
- 10.1134/1.567721
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Porous silicon (PSi) samples were prepared by electrochemical etching of silicon-on-insulator wafers, consisting of 45 m thick p-type (111) silicon epitaxial layer grown on a thin 100 nm SiO 2 layer on silicon substrates, by varying the concentration of 48% HF in ethanol solution. Within the epitaxi
Silicon-on insulator (SOI) wafers, consisting of 22 lm thick p-type silicon epitaxial layer grown on 280 lm thick n-type (1 1 1) silicon substrate, were electrochemically etched in hydrofluoric acid (HF) to produce porous silicon (PS) samples. The pores of different size and different depth were obt