✦ LIBER ✦

A study on the performance of metal-oxide-semiconductor-field-effect-transistors with asymmetric junction doping structure

✍ Scribed by Hyunho Park; Byoungdeog Choi

Book ID: 116337628
Publisher: Elsevier Science
Year: 2012
Tongue: English
Weight: 746 KB
Volume: 12
Category: Article
ISSN: 1567-1739
DOI: 10.1016/j.cap.2012.04.026

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Effects of quantum coupling on the perfo

Effects of quantum coupling on the performance of metal-oxide-semiconductor field transistors

✍ Ling-Feng Mao 📂 Article 📅 2009 🏛 Springer-Verlag 🌐 English ⚖ 416 KB

Impact of the channel thickness on the p

Impact of the channel thickness on the performance of Schottky barrier metal–oxide–semiconductor field-effect transistors

✍ Knoch, J.; Appenzeller, J. 📂 Article 📅 2002 🏛 American Institute of Physics 🌐 English ⚖ 675 KB

Effect of Al incorporation on the perfor

Effect of Al incorporation on the performance and reliability of p-type metal-oxide-semiconductor field effect transistors

✍ Yoon-Uk Heo; Tae-Young Jang; Donghyup Kim; Jun Suk Chang; Manh Cuong Nguyen; Mus 📂 Article 📅 2012 🏛 Elsevier Science 🌐 English ⚖ 700 KB

The effects of a sacrificial oxide proce

The effects of a sacrificial oxide process on metal—oxide—semiconductor field effect transistors fabricated with ion-beam-nitridation technology

✍ Han-Sheng Lee 📂 Article 📅 1986 🏛 Elsevier Science 🌐 English ⚖ 485 KB

Channel length scaling and the impact of

Channel length scaling and the impact of metal gate work function on the performance of double gate-metal oxide semiconductor field-effect transistors

✍ D. Rechem; S. Latreche; C. Gontrand 📂 Article 📅 2009 🏛 Springer-Verlag 🌐 English ⚖ 568 KB

Experimental study on isolation edge eff

Experimental study on isolation edge effects in the short channel characteristics of metal oxide semiconductor field effect transistors (MOSFETs)

✍ Toshiyuki Oishi; Katsuomi Shiozawa; Akihiko Furukawa; Yuji Abe; Yasunori Tokuda; 📂 Article 📅 1999 🏛 Elsevier Science 🌐 English ⚖ 265 KB

We investigate experimentally the isolation edge shape effects on the short channel characteristics, i.e. the gate length dependence, of metal oxide semiconductor field effect transistors (MOSFETs) for various isolation structures, as compared with a reference MOSFET without influence of the isolati