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A study of the oxide grown on Tb and terbium silicide by XPS, AES and XRD

✍ Scribed by G.L.P. Berning; H.C. Swart


Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
354 KB
Volume
78
Category
Article
ISSN
0169-4332

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XPS and x-ray-induced AES have been used to study the reaction layers formed on silicon powder samples heated in ultra-high purity nitrogen at temperatures between 1100 and 1200 "C. An equation was derived to calculate the average surface reaction layer thicknesses from the silicon AES spectra. The