✦ LIBER ✦

The Nitridation of a Silicon Powder Studied by XPS and X-ray-induced AES

✍ Scribed by Sen Wang, Pu; Wittberg, Thomas N.

Publisher: John Wiley and Sons
Year: 1996
Tongue: English
Weight: 352 KB
Volume: 24
Category: Article
ISSN: 0142-2421
DOI: 10.1002/(sici)1096-9918(199602)24:2<95::aid-sia78>3.0.co;2-o

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✦ Synopsis

XPS and x-ray-induced AES have been used to study the reaction layers formed on silicon powder samples heated in ultra-high purity nitrogen at temperatures between 1100 and 1200 "C. An equation was derived to calculate the average surface reaction layer thicknesses from the silicon AES spectra. The results indicate that samples where the reaction layer is relatively thin may have some silicon oxynitride within this layer. For samples with calculated reaction layer thicknesses > 1.5 nm, the N 1s peak binding energy and Si KLL peak kinetic energy are characteristic of bulk Si,N,. The nitridation kinetics follow a linear rate law within this temperature range with a measured activation energy of 280 f 60 kJ mol-'.

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