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A study of the formation of nanometer-scale cavities in helium-implanted 4H-SiC

✍ Scribed by C.H. Zhang; S.E. Donnelly; V.M. Vishnyakov; J.H. Evans; T. Shibayama; Y.M. Sun

Book ID: 113822817
Publisher: Elsevier Science
Year: 2004
Tongue: English
Weight: 631 KB
Volume: 218
Category: Article
ISSN: 0168-583X
DOI: 10.1016/j.nimb.2003.12.082

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