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Formation of Nanometer-Scale Grooves in Silicon with a Scanning Tunneling Microscope

โœ Scribed by Kobayashi, A.; Grey, F.; Williams, R. S.; Aono, M.


Book ID
121152623
Publisher
American Association for the Advancement of Science
Year
1993
Tongue
English
Weight
474 KB
Volume
259
Category
Article
ISSN
0036-8075

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Nanometer size features have been etched in a circa 200 8, thick CdSe fti held in a scanning tunneling microscope (STM) by irradiation with a He-Ne laser (8 mW) with the STM tip biased to a positive potential. Etching does not occur in the absence of irradiation or with the STM tip biased negative.