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A state-space behavioral model for CMOS class E power amplifiers

✍ Scribed by Reynaert, P.; Mertens, K.L.R.; Steyaert, M.S.J.


Book ID
115498665
Publisher
IEEE
Year
2003
Tongue
English
Weight
467 KB
Volume
22
Category
Article
ISSN
0278-0070

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## Abstract A 800‐MHz power amplifier is designed using a 0.18‐μm RF CMOS process. The voltage‐combining method is used for power combining. A transmission line transformer on a printed circuit board (PCB) is designed as a power combiner. For the switching mode power amplifier, a cascaded class‐D d