A class-E CMOS RF power amplifier with c
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Jaemin Jang; Hongtak Lee; Changkun Park; Songcheol Hong
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Article
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2008
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John Wiley and Sons
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English
β 334 KB
## Abstract A 800βMHz power amplifier is designed using a 0.18βΞΌm RF CMOS process. The voltageβcombining method is used for power combining. A transmission line transformer on a printed circuit board (PCB) is designed as a power combiner. For the switching mode power amplifier, a cascaded classβD d