## Abstract A 800‐MHz power amplifier is designed using a 0.18‐μm RF CMOS process. The voltage‐combining method is used for power combining. A transmission line transformer on a printed circuit board (PCB) is designed as a power combiner. For the switching mode power amplifier, a cascaded class‐D d
Design of a Class E Power Amplifier with LDMOS in Standard CMOS
✍ Scribed by João Ramos; Michiel Steyaert
- Publisher
- Springer
- Year
- 2005
- Tongue
- English
- Weight
- 220 KB
- Volume
- 44
- Category
- Article
- ISSN
- 0925-1030
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
## Abstract In this article, an LDMOS class‐E power amplifier is analyzed based on the equivalent transistor model considering drift region effect.In the analysis, nonzero switch‐on resistance, parasitic feedback capacitance, and finite drain DC feed inductance are taken into account, so as to pres
An asymmetrical spurline filter (ASF) with dual-bandgap characteristics is designed and applied as the load network of the class-E power amplifier to improve the output power and efficiency. Meanwhile, an equivalent circuit model is built for the proposed ASF based on two LCR resonators. V
## Abstract The nominal operating condition of Class E power amplifiers with parallel‐connected nonlinear parasitic capacitance and linear capacitance at any duty ratio has been studied in this article. Basic design equations are derived analytically. Using these equations, the component values for
The design of a broadband high-efficiency class-E power amplifier (PA) using a 0.8-m PHEMT device is presented. In order to achieve broadband operation, a T-transform output-load network is used. Power-added efficiency (PAE) greater than 50% is achieved over a frequency bandwidth of 49%. The simulat