## Abstract This article reports a high efficiency class‐E power amplifier using a SiC MESFET, which is designed and tested at 2.14 GHz. To improve output power and efficiency by suppressing harmonic powers, an output matching circuit using the transmission lines is used. From measured results for
Design of asymmetrical spurline filter for a high power sic MESFET class-E power amplifier
✍ Scribed by Li Wang; Wenhua Chen; Peng Wang; Xin Xue; Jiaxing Dong; Zhenghe Feng
- Publisher
- John Wiley and Sons
- Year
- 2010
- Tongue
- English
- Weight
- 1022 KB
- Volume
- 52
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
An asymmetrical spurline filter (ASF) with dual-bandgap characteristics is designed and applied as the load network of the class-E power amplifier to improve the output power and efficiency. Meanwhile, an equivalent circuit model is built for the proposed ASF based on two LCR resonators. V
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## Abstract Based on a Silicon carbide (SiC) Metal‐Semiconductor Field Effects Transistor (MESFET), a broadband VHF SiC class‐E high power amplifier is implemented by using a π‐transform output load network. Experimental results show that drain efficiency greater than 60% is achieved over a frequen
The new analytical method presented in this paper extends the principle of the equivalent small parameter method (ESP, an improved perturbation technique) to analyse and design Class E power ampli"ers. Using this method the analytical expression for the output voltage (or current), containing the fu