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A novel broadband VHF SiC MESFET class-E high power amplifier

✍ Scribed by Wenhua Chen; Xiang Li; Li Wang; Zhenghe Feng; Xing Xue

Publisher
John Wiley and Sons
Year
2010
Tongue
English
Weight
529 KB
Volume
52
Category
Article
ISSN
0895-2477

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✦ Synopsis

Abstract

Based on a Silicon carbide (SiC) Metal‐Semiconductor Field Effects Transistor (MESFET), a broadband VHF SiC class‐E high power amplifier is implemented by using a π‐transform output load network. Experimental results show that drain efficiency greater than 60% is achieved over a frequency bandwidth of 51.4%, and the peak output power exceeds 34 W. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 272–276, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24922

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