## Abstract In this article, an LDMOS class‐E power amplifier is analyzed based on the equivalent transistor model considering drift region effect.In the analysis, nonzero switch‐on resistance, parasitic feedback capacitance, and finite drain DC feed inductance are taken into account, so as to pres
✦ LIBER ✦
Design of low-cost broadband class-E power amplifier using low-voltage supply
✍ Scribed by Y. Qin; S. Gao; A. Sambell; E. Korolkiewicz
- Publisher
- John Wiley and Sons
- Year
- 2004
- Tongue
- English
- Weight
- 558 KB
- Volume
- 44
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
The design of a broadband high-efficiency class-E power amplifier (PA) using a 0.8-m PHEMT device is presented. In order to achieve broadband operation, a T-transform output-load network is used. Power-added efficiency (PAE) greater than 50% is achieved over a frequency bandwidth of 49%. The simulation and practical results confirm the validity of this approach.
📜 SIMILAR VOLUMES
Analysis and design of class-E power amp
Analysis and design of class-E power amplifier using equivalent LDMOS model with drift region effect
✍
Yingjie Xu; Xiaowei Zhu; Changjiang You
📂
Article
📅
2010
🏛
John Wiley and Sons
🌐
English
⚖ 618 KB