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A class-E CMOS RF power amplifier with cascaded class-D driver amplifier

✍ Scribed by Jaemin Jang; Hongtak Lee; Changkun Park; Songcheol Hong

Publisher
John Wiley and Sons
Year
2008
Tongue
English
Weight
334 KB
Volume
50
Category
Article
ISSN
0895-2477

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✦ Synopsis

Abstract

A 800‐MHz power amplifier is designed using a 0.18‐μm RF CMOS process. The voltage‐combining method is used for power combining. A transmission line transformer on a printed circuit board (PCB) is designed as a power combiner. For the switching mode power amplifier, a cascaded class‐D driver amplifier is proposed using a feedback resistor and a DC‐blocking capacitor. The power amplifier has an output power of 32.9 dBm and a power‐added efficiency of 60.25%. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 470–473, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23106

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