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Analysis and design of power-controllable CMOS class E RF-tuned power amplifiers

✍ Scribed by Tu, S.H.-L.


Book ID
114444750
Publisher
The Institution of Engineering and Technology
Year
2012
Tongue
English
Weight
730 KB
Volume
5
Category
Article
ISSN
1755-4535

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## Abstract A 800‐MHz power amplifier is designed using a 0.18‐μm RF CMOS process. The voltage‐combining method is used for power combining. A transmission line transformer on a printed circuit board (PCB) is designed as a power combiner. For the switching mode power amplifier, a cascaded class‐D d