Low-distortion CMOS complementary class E RF tuned power amplifiers
β Scribed by Hung-Lung Tu, S.; Toumazou, C.
- Book ID
- 115498461
- Publisher
- IEEE
- Year
- 2000
- Tongue
- English
- Weight
- 149 KB
- Volume
- 47
- Category
- Article
- ISSN
- 1057-7122
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π SIMILAR VOLUMES
## Abstract A 800βMHz power amplifier is designed using a 0.18βΞΌm RF CMOS process. The voltageβcombining method is used for power combining. A transmission line transformer on a printed circuit board (PCB) is designed as a power combiner. For the switching mode power amplifier, a cascaded classβD d
A method for designing an amplifier that does not need an RF choke coil is proposed. This is accomplished by adding a shunt capacitor to a class E amplifier with a shunt inductor; this creates class E switching where higher harmonics are induced in the inductor-fed input waveform. A design method is