## Abstract This letter presents a new low power and wide‐locking range divide‐by‐2 injection‐locked frequency divider (ILFD). The ILFD consists of a new 5.35 GHz quadrature voltage controlled oscillator (QVCO) and two NMOS switches, which are in parallel with the QVCO resonators for signal injecti
A small die area and wide locking range CMOS frequency divider
✍ Scribed by Sheng-Lyang Jang; Jui-Cheng Han; Chien-Feng Lee; J.-F. Huang
- Publisher
- John Wiley and Sons
- Year
- 2008
- Tongue
- English
- Weight
- 236 KB
- Volume
- 50
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
Abstract
This letter proposes a new injection‐locked frequency divider (ILFD) with wide locking range and small die area. The proposed CMOS ILFD consists of an injection MOS and an LC tank voltage‐controlled oscillator with a cross‐coupled switching pair and tunable active inductors. The divide‐by‐2 ILFD was fabricated in the 0.18‐μm 1P6M CMOS technology. At the supply voltage of 1.8 V, the divider free‐running frequency is tunable from 1.46 to 2.7 GHz, and at the incident power of −4 dBm the locking range is about 3.4 GHz (79%), from the incident frequency of 2.6 to 6.0 GHz. The core power consumption is 7.2 mW and the die area is 0.383 × 0.379 mm^2^. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 541–544, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23090
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## Abstract A 58‐GHz (V‐band) CMOS direct injection‐locked frequency‐divider (DILFD) using input‐power‐matching technique for locking‐range enhancement is reported for the first time. In an input‐power‐matching technique, an inductive input‐matching‐network is added to the gate of the NMOS switch t
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