✦ LIBER ✦

A review of nitrogen trifluoride for dry etching in microelectronics processing

✍ Scribed by Bogdan Golja; John A. Barkanic; Andrew Hoff

Publisher: Elsevier Science
Year: 1985
Tongue: English
Weight: 804 KB
Volume: 16
Category: Article
ISSN: 0026-2692
DOI: 10.1016/s0026-2692(85)80121-x

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✦ Synopsis

The development of new gases for dry etching is important if submicron device geometries are to be realized. Gases which are currently in use for the various proce~__sing steps associated with device fabrication include CF4, CF4/O2, SF6, CC14, and to a lesser extent NFa. It is this gas, NF3, which is the topic of this article. The review presents a synopsis of the etching characteristics of material such as Si, SiO:, in NF3 plasmas.

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