A review of nitrogen trifluoride for dry etching in microelectronics processing : Bogdan Golja, John A. Barkanic and Andrew Hoff. Microelectron. J. 16 (1) 5 (1985)

A review of nitrogen trifluoride for dry

A review of nitrogen trifluoride for dry etching in microelectronics processing

✍ Bogdan Golja; John A. Barkanic; Andrew Hoff 📂 Article 📅 1985 🏛 Elsevier Science 🌐 English ⚖ 804 KB

The development of new gases for dry etching is important if submicron device geometries are to be realized. Gases which are currently in use for the various proce~\_\_sing steps associated with device fabrication include CF4, CF4/O2, SF6, CC14, and to a lesser extent NFa. It is this gas, NF3, which