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Advances in dry etching processes—a review : S. J. Fonash. Solid St. Technol. 150 (January 1985)

Publisher: Elsevier Science
Year: 1986
Tongue: English
Weight: 118 KB
Volume: 26
Category: Article
ISSN: 0026-2714
DOI: 10.1016/0026-2714(86)90623-2

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continued from page 6 t tent results allowing one to describe the variation of the carrier scattering mechanisms across the film and to determine the exact profiles for carrier mobilities and concentration as well as for the anisotrop coefficient.