A comparative analysis of thermal gate o
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Sun-Ghil Lee; Young Pil Kim; Hye-Lan Lee; Beom Jun Jin; Jong-Wook Lee; Yu Gyun S
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Article
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2005
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Elsevier Science
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English
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Although the high mobility channel was formed with the strained Si layer on the fully relaxed Si 0.8 Ge 0.2 buffer layer, the mobility was severely attenuated with increasing the gate bias due to the degraded interface. The quality of oxide grown on strained Si was found to be worse than that for th