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A novel trench gate MOSFET with a multiple-layered gate oxide for high-reliability operation

โœ Scribed by Sang Gi Kim, Dong Ha Kah, Kyoung Il Na, Yil Suk Yang, Jin Gun Koo, Jong Dae Kim, Jin Ho Lee, Hoon Soo Park


Book ID
115076866
Publisher
The Korean Physical Society
Year
2012
Tongue
English
Weight
555 KB
Volume
60
Category
Article
ISSN
0374-4884

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Although the high mobility channel was formed with the strained Si layer on the fully relaxed Si 0.8 Ge 0.2 buffer layer, the mobility was severely attenuated with increasing the gate bias due to the degraded interface. The quality of oxide grown on strained Si was found to be worse than that for th