## Abstract This letter presents the design and measurement of a CMOS impulse‐radio ultra‐wideband (UWB) impulse generator using IBM 90‐nm CMOS technology for the application of 3.1–10.6 GHz UWB systems. The impulse generator has a simplex architecture using digital circuits and passive bandpass fi
A noncoherent IR-UWB CMOS receiver for 3–5 GHz application
✍ Scribed by Mincheol Ha; Youngjin Park; Jae-Seung Lee; Yunseong Eo
- Publisher
- John Wiley and Sons
- Year
- 2010
- Tongue
- English
- Weight
- 336 KB
- Volume
- 52
- Category
- Article
- ISSN
- 0895-2477
No coin nor oath required. For personal study only.
✦ Synopsis
Abstract
A fully integrated noncoherent IR‐UWB CMOS receiver is implemented using 0.18 μm CMOS technology.To remove the bulky and lossy external balun, the receiver contains single to differential circuit embedded in low‐noise amplifier (LNA) stages. The LNA stage also includes a tunable LC load for band selection. The measured results show that the sensitivity is −78.9 dBm at 1 Mbps in condition of BER of 10^–3^. The chip size is 2.3 mm × 1.3 mm including pads. The consumed current is 20 mA at 1.8 V supply. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52:914–917, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.25039
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