## Abstract We have proposed a 3.1–4.8 GHz CMOS wideband single to differential low noise amplifier (LNA) for ultra wideband system. The LNA is fabricated with the 0.18 μm 1P6M standard CMOS process. Measurement of the CMOS LNA was performed using RF probe station. From 3.1 to 4.8 GHz, the wideband
A 0.18-μm 3.1–4.8 GHz CMOS wideband LNA for UWB system
✍ Scribed by Moo I. Jeong; Jung N. Lee; Chang S. Lee
- Publisher
- John Wiley and Sons
- Year
- 2008
- Tongue
- English
- Weight
- 328 KB
- Volume
- 50
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
Abstract
We have proposed a 3.1–4.8 GHz CMOS wideband low noise amplifier (LNA) for ultra wideband system. The LNA is fabricated with the 0.18‐μm 1P6M standard CMOS process. Measurement of the CMOS LNA was performed using RF probe station. From 3.1 to 4.8 GHz, the wideband LNA exhibits a noise figure of 3.3–3.7 dB, a gain of 12.8–13.9 dB, and an input/output return loss higher then 9.4/7.3 dB. The input IP3 (IIP3) at 4.1 GHz is +1.25 dBm, and consumes 16.5 mW of power. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 2368–2371, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23664
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