## Abstract A fully integrated noncoherent IR‐UWB CMOS receiver is implemented using 0.18 μm CMOS technology.To remove the bulky and lossy external balun, the receiver contains single to differential circuit embedded in low‐noise amplifier (LNA) stages. The LNA stage also includes a tunable LC load
A fully integrated 3–10-GHz IR-UWB CMOS impulse generator
✍ Scribed by Ju-Ching Li; Sungyong Jung; Hyejin Moon
- Publisher
- John Wiley and Sons
- Year
- 2011
- Tongue
- English
- Weight
- 359 KB
- Volume
- 53
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
Abstract
This letter presents the design and measurement of a CMOS impulse‐radio ultra‐wideband (UWB) impulse generator using IBM 90‐nm CMOS technology for the application of 3.1–10.6 GHz UWB systems. The impulse generator has a simplex architecture using digital circuits and passive bandpass filter. The measurement results show great consistency with the simulation results. The impulse generator has a center frequency of 5.8 GHz and consumes an average power of 0.9 mW at 200 MHz pulse repetition frequency. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26137
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