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A non-isothermal device simulator for MOSFET analysis

โœ Scribed by Hayashi, H.; Dang, R.


Book ID
114548100
Publisher
IEEE
Year
1993
Tongue
English
Weight
366 KB
Volume
29
Category
Article
ISSN
0018-9464

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Device simulation for decananometer MOSF
โœ Enrico Sangiorgi; Pierpaolo Palestri; David Esseni; Claudio Fiegna; Antonio Abra ๐Ÿ“‚ Article ๐Ÿ“… 2003 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 286 KB

This paper discusses the main issues related to the application of numerical device simulation to advanced decananometer-size MOSFETs. The main trends of CMOS technology evolution are analyzed and discussed with emphasis on the requirements imposed to device simulation programs suitable for applicat