Analysis of an anomalous subthreshold current in a fully recessed oxide MOSFET using a three-dimensional device simulator

✍ Scribed by Shigyo, N.; Dang, R.

• Book ID: 114595077
• Publisher: IEEE
• Year: 1985
• Tongue: English
• Weight: 497 KB
• Volume: 32
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/t-ed.1985.21961