Analysis of an Anomalous Subthreshold Current in a Fully Recessed Oxide MOSFET Using a Three-Dimensional Device Simulator

✍ Scribed by Shigyo, N.; Dan, R.

• Book ID: 119798434
• Publisher: IEEE
• Year: 1985
• Tongue: English
• Weight: 814 KB
• Volume: 20
• Category: Article
• ISSN: 0018-9200
• DOI: 10.1109/jssc.1985.1052315