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A noise model for high electron mobility transistors

✍ Scribed by Anwar, A.F.M.; Kuo-Wei Liu


Book ID
114535926
Publisher
IEEE
Year
1994
Tongue
English
Weight
612 KB
Volume
41
Category
Article
ISSN
0018-9383

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Analytical noise model of a high-electro
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## Abstract Noise analysis for AlGaAs/GaAs HEMT and AlGaAs/InGaAs/GaAs PHEMT is developed at microwave frequency using an accurate charge control approach. The small‐signal parameters and the drain and gate‐noise sources are calculated to determine the noise coefficients and correlation coefficient