𝔖 Bobbio Scriptorium
✦   LIBER   ✦

A microwave model for high electron mobility transistors

✍ Scribed by Kasemsuwan, V.; El Nokali, M.A.


Book ID
114552879
Publisher
IEEE
Year
1997
Tongue
English
Weight
280 KB
Volume
45
Category
Article
ISSN
0018-9480

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Analytical noise model of a high-electro
✍ Vandana Guru; H. P. Vyas; Mridula Gupta; R. S. Gupta πŸ“‚ Article πŸ“… 2004 πŸ› John Wiley and Sons 🌐 English βš– 154 KB

## Abstract Noise analysis for AlGaAs/GaAs HEMT and AlGaAs/InGaAs/GaAs PHEMT is developed at microwave frequency using an accurate charge control approach. The small‐signal parameters and the drain and gate‐noise sources are calculated to determine the noise coefficients and correlation coefficient