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A charge based capacitance model for high electron mobility transistors

✍ Scribed by Hyungkeun Ahn; M. El Nokali


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
315 KB
Volume
38
Category
Article
ISSN
0038-1101

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Analytical noise model of a high-electro
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## Abstract Noise analysis for AlGaAs/GaAs HEMT and AlGaAs/InGaAs/GaAs PHEMT is developed at microwave frequency using an accurate charge control approach. The small‐signal parameters and the drain and gate‐noise sources are calculated to determine the noise coefficients and correlation coefficient