Aδ-doped In0.24Ga0.76As/GaAs pseudomorph
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Ching-Sung Lee; Wei-Chou Hsu; Sheng San Li; Pin Ho
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Article
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2001
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Elsevier Science
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English
⚖ 174 KB
A new δ-doped In 0.24 Ga 0.76 As/GaAs pseudomorphic high electron mobility transistor (HEMT) using a graded superlattice spacer grown by molecular beam epitaxy (MBE) has been successfully fabricated and investigated. The present device structure demonstrated a more than 40% enhancement of electron m