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Ultra-low-noise cryogenic high-electron-mobility transistors

✍ Scribed by Duh, K.H.G.; Pospieszalski, M.W.; Kopp, W.F.; Ho, P.; Jabra, A.A.; Chao, P.-C.; Smith, P.M.; Lester, L.F.; Ballingall, J.M.; Weinreb, S.

No coin nor oath required. For personal study only.

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