IIA-3 cryogenic noise performance of quarter-micrometer gate-length high-electron-mobility transistors

✍ Scribed by Chao, P.C.; Smith, P.M.; Mishra, U.K.; Palmateer, S.C.; Hwang, J.C.M.; Pospieszalski, M.; Brooks, T.; Weinreb, S.

• Book ID: 114595356
• Publisher: IEEE
• Year: 1985
• Tongue: English
• Weight: 170 KB
• Volume: 32
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/t-ed.1985.22309