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A new test structure for extracting extrinsic parameters in double-polysilicon bipolar transistors

✍ Scribed by Sanden, M.; Zhang, S.-L.; Grahn, J.V.; Ostling, M.

Book ID: 114538279
Publisher: IEEE
Year: 2000
Tongue: English
Weight: 147 KB
Volume: 47
Category: Article
ISSN: 0018-9383
DOI: 10.1109/16.861590

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